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  document number: 84634 for technical questions, please contact: optocoupl er.answers@vishay.com www.vishay.com rev. 1.5, 03-nov-08 947 optocoupler, phototriac output, zero crossing, high dv/dt, low input current vo4157, vo4158 vishay semiconductors description the vo4157/vo4158 consists of a gaas irled optically coupled to a photosensitive zero crossing triac packaged in a dip-6 package. high input sensitivity is achieved by using an emitter follower phototransistor and a cascaded scr predriver resulting in an led trigger current of 1.6 ma for bin d, 2 ma for bin h, and 3 ma for bin m. the new phototriac zero crossi ng family uses a proprietary dv/dt clamp resulting in a static dv/dt of greater than 5 kv/s. the vo4157/vo4158 isolates low-voltage logic from 120, 240, and 380 vac lines to control resistive, inductive, or capacitive loads incl uding motors, solenoids, high current thyristors or triac and relays. features ? high static dv/dt 5 kv/s ? high input sensitivity i ft = 1.6, 2, and 3 ma ? 300 ma on-state current ? zero voltage crossing detector ? 700 v, and 800 v blocking voltage ? isolation test voltage 5300 v rms applications ? solid-state relays ? industrial controls ? office equipment ? consumer appliances agency approvals ? ul1577, file no. e52744 system code h or j, double protection ? cul - file no. e52744, equivalent to csa bulletin 5a ? din en 60747-5-5 (vde 0884) available with option 1 note for additional information on the availabl e options refer to option information. i179030 1 2 3 6 5 4 mt2 mt1 n c a c n c *zero crossing circ u it zcc* order information part remarks vo4157d 700 v v drm , l ft = 1.6 ma, dip-6, vo4157d-x006 700 v v drm , i ft = 1.6 ma, dip-6 400 mil vo4157d-x007 700 v v drm , i ft = 1.6 ma, smd-6 vo4157h 700 v v drm , i ft = 2 ma, dip-6 vo4157h-x006 700 v v drm , i ft = 2 ma, dip-6 400 mil vo4157h-x007 700 v v drm , i ft = 2 ma, smd-6 vo4157m 700 v v drm , i ft = 3 ma, dip-6 vo4157m-x006 700 v v drm , i ft = 3 ma, dip-6 400 mil vo4157m-x007 700 v v drm , i ft = 3 ma, smd-6 vo4158d 800 v v drm , i ft = 1.6 ma, dip-6 VO4158D-X006 800 v v drm , i ft = 1.6 ma, dip-6 400 mil vo4158d-x007 800 v v drm , i ft = 1.6 ma, smd-6 vo4158h 800 v v drm , i ft = 2 ma, dip-6 vo4158h-x006 800 v v drm , i ft = 2 ma, dip-6 400 mil vo4158h-x007 800 v v drm , i ft = 2 ma, smd-6 vo4158m 800 v v drm , i ft = 3 ma, dip-6 vo4158m-x006 800 v v drm , i ft = 3 ma, dip-6 400 mil vo4158m-x007 800 v v drm , i ft = 3 ma, smd-6
www.vishay.com for technical questions, pleas e contact: optocoupler.answers@vishay.com document number: 84634 948 rev. 1.5, 03-nov-08 vo4157, vo4158 vishay semiconductors optocoupler, phototriac output, zero crossing, high dv/dt, low input current note t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximum ratings can cause permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to absolute ma ximum ratings for extended periods of the time c an adversely affect reliability. this phototriac should not be used to drive a load directly. it is intended to be a trigger device only. fig. 1 - recommended operating condition absolute maximum ratings parameter test condition part symbol value unit input reverse voltage v r 6v forward current i f 60 ma surge current i fsm 2.5 a derate from 25 c 1.33 mw/c output peak off-state voltage vo4157d/h/m v drm 700 v vo4158d/h/m v drm 800 v rms on-state current i tm 300 ma derate from 25 c 6.6 mw/c coupler isolation test voltage (between emitter and detector, climate per din 500414, part 2, nov. 74) t = 1 min v iso 5300 v rms storage temperature range t stg - 55 to + 150 c ambient temperature range t amb - 55 to + 100 c soldering temperature max. 10 s dip soldering 0.5 mm from case bottom t sld 260 c 0 50 100 150 200 250 300 350 - 40 - 20 0 20 40 60 8 0 100 t am b - temperat u re (c) i l - load c u rrent (ma) i f = 3 ma to 10 ma 19623
document number: 84634 for technical questions, please contact: optocoupl er.answers@vishay.com www.vishay.com rev. 1.5, 03-nov-08 949 vo4157, vo4158 optocoupler, phototriac output, zero crossing, high dv/dt, low input current vishay semiconductors note the thermal model is represented in the thermal network below. ea ch resistance value given in th is model can be used to calcula te the temperatures at each node for a given operat ing condition. the thermal resistance from board to ambient will be dependent on th e type of pcb, layout and thickness of copper trac es. for a detailed explanation of the thermal m odel, please reference vishay's thermal chara cteristics of optocouplers application note. thermal characteristics parameter test condition symbol value unit led power dissipation at 25 c p diss 100 mw output power dissipation at 25 c p diss 500 mw total power dissipation at 25 c p tot 600 mw maximum led junction temperature t jmax 125 c maximum output die junction temperature t jmax 125 c thermal resistance, junction emitter to board jeb 150 c/w thermal resistance, junction emitter to case jec 139 c/w thermal resistance, j unction detector to board jdb 78 c/w thermal resistance, junction detector to case jdc 103 c/w thermal resistance, junction emitter to junction detector jed 496 c/w thermal resistance, case to ambient ca 3563 c/w t a ca t c t jd t je t b ec eb dc db ba de t a 19996 package electrical characteristics parameter test condition part symbol min. typ. max. unit input forward voltage i f = 10 ma v f 1.2 1.4 v reverse current v r = 6 v i r 0.1 10 a input capacitance v f = 0 v, f = 1 mhz c i 25 pf output repetitive peak off-state voltage i drm = 100 a vo4157d/h/m v drm 700 v vo4158d/h/m v drm 800 v off-state current v d = v drm, i f = 0 i drm 100 a on-state voltage i t = 300 ma v tm 3v on-state current pf = 1, v t(rms) = 1.7 v i tm 300 ma off-state current in inhibit state i f = 2 ma, v drm i dinh 200 a holding current i h 500 a zero cross inhibit voltage i f = rated i ft v ih 20 v critical rate of rise of off-state voltage v d = 0.67 v drm , t j = 25 c dv/dt cr 5000 v/s
www.vishay.com for technical questions, pleas e contact: optocoupler.answers@vishay.com document number: 84634 950 rev. 1.5, 03-nov-08 vo4157, vo4158 vishay semiconductors optocoupler, phototriac output, zero crossing, high dv/dt, low input current note t amb = 25 c, unless otherwise specified. minimum and maximum values were tested requierements. typical val ues are characteristic s of the device and are the result of en gineering evaluations. typical values are for information only and are not part of the testing requirements. typical characteristics t amb = 25 c, unless otherwise specified fig. 2 - diode forward voltage vs. forward curr ent fig. 3 - diode reverse voltage vs. temperature coupler led trigger current, current required to latch output v d = 3 v vo4157d i ft 1.6 ma vo4157h i ft 2ma vo4157m i ft 3ma vo4158d i ft 1.6 ma vo4158h i ft 2ma vo4158m i ft 3ma common mode coupling capacitance c cm 0.01 pf capacitance (input to output) f = 1 mhz, v io = 0 v c io 0.8 pf safety and insulation ratings parameter test condition symbol min. typ. max. unit climatic classification (accor ding to iec 68 part 1) 55/100/21 pollution degree (din vde 0109) 2 comparative tracking index per din iec 112/vde 0303 part 1, group iiia per din vde 6110 175 399 175 399 v iotm v iotm 8000 v v iorm v iorm 890 v p so p so 500 mw i si i si 250 ma t si t si 175 c creepage distance 7mm electrical characteristics parameter test condition part symbol min. typ. max. unit 0.7 0.9 1.1 1.3 1.5 0.1 1.0 10.0 100.0 0 c 25 c 50 c i f (ma) v f ( v ) 19997 32 34 36 3 8 40 42 - 60 - 40 - 20 0 20 40 60 8 0 100 temperat u re (oc) v r ( v ) i r = 10 a 19551
document number: 84634 for technical questions, please contact: optocoupl er.answers@vishay.com www.vishay.com rev. 1.5, 03-nov-08 951 vo4157, vo4158 optocoupler, phototriac output, zero crossing, high dv/dt, low input current vishay semiconductors fig. 4 - leakage current vs. ambient temperature fig. 5 - on state current vs. on state voltage fig. 6 - output off current (leakage) vs. voltage fig. 7 - normalized trigger input current vs. temperature fig. 8 - trigger current vs. turn-on time fig. 9 - normalized holding current vs. temperature 1 10 100 1000 10 000 - 60 - 40 - 20 0 20 40 60 8 0 100 t a - am b ient temperat u re (c) i drm - leakage c u rrent (na) 19592 i drm at 8 00 v 1 10 100 1000 12 3 4 v tm - on-state v oltage ( v ) i tm - on-state c u rrent (ma) 25 c 8 5 c 0 c i f = 2 ma 19541 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 0 100 200 300 400 500 600 700 8 00 900 applied v oltage( v ) leakage c u rrent (na) 8 5 c 25 c 0 c 19453 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 55 - 35 - 15 5 25 45 65 8 5 100 t a - am b ient temperat u re (c) n ormalized i ft at 25 c i ft - n ormalized 19454 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10 100 1000 t u rn-on time ( s) i ft (ma) 19624 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 - 60 - 40 - 20 0 20 40 60 8 0100 temperat u re (oc) n ormalized i h 1999 8 n ormalized i h at 25 c
www.vishay.com for technical questions, pleas e contact: optocoupler.answers@vishay.com document number: 84634 952 rev. 1.5, 03-nov-08 vo4157, vo4158 vishay semiconductors optocoupler, phototriac output, zero crossing, high dv/dt, low input current fig. 10 - i ft vs. led pulse width fig. 11 - i ft vs. v rms and temperature fig. 12 - basic power triac driver circuit power factor considerations as a zero voltage crossing optotriac, the commutating dv/dt spikes can inhibit one half of the triac from turning on. if the spike potential exceeds the inhibit voltage of the zero-cross detection circuit, half of the triac will be held-off and not turn-on. this hold-off condition can be eliminated by using a capacitor or rc snubber placed directly across the power triac as shown in figure 11. note that the value of the capacitor increases as a function of the load current. the hold-off condition also can be eliminated by providing a higher level of led drive current. the higher led drive provides a larger photocurrent which causes the phototransistor to turn-on before the commutating spike has activated the zero-cross detection circuit. for example, if a device requires 1.5 ma for a resistive load, then 2.7 ma (1.8 times) may be required to control an inductive load whose power factor is less than 0.3. 0 2 4 6 8 10 12 14 16 1 8 10 20 30 40 50 60 70 trigger p u lse w idth ( s) i ft - trigger c u rrent (ma) 8 5 oc 100 oc 25 oc - 40 oc 20005 21614 v rms ( v ) i ft (ma) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 50 100 150 200 250 300 350 100 c 8 5 c 50 c 25 c 21613
document number: 84634 for technical questions, please contact: optocoupl er.answers@vishay.com www.vishay.com rev. 1.5, 03-nov-08 953 vo4157, vo4158 optocoupler, phototriac output, zero crossing, high dv/dt, low input current vishay semiconductors ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve t he performance of our products, processes, distribution and o perating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances in to the atmosphere whic h are known as ozone depleting substances (odss). the montreal protocol (1987) a nd its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. vari ous national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of co ntinuous improvements to elim inate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify t hat our semiconductors are not manufactured with ozone dep leting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating para meters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, dam ages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death as sociated with such unint ended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.


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